Preparation of crystalline TiC thin films grown by pulsed Nd:YAG laser deposition using Ti target in methane gas

被引:26
作者
Suda, Y
Kawasaki, H
Doi, K
Nanba, J
Ohshima, T
机构
[1] Sasebo Natl Coll Technol, Dept Elect Engn, Nagasaki 8571193, Japan
[2] Kumamoto Univ, Grad Sch Sci & Technol, Kumamoto 8600862, Japan
关键词
D O I
10.1016/S1044-5803(02)00243-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Titanium carbide (TiC) thin films that are smooth and pinhole-free have been synthesized on Si(I 00) substrates by a pulsed neodymium:yttrium-aluminum-gamet (Nd:YAG) laser deposition method using titanium and TiC targets in methane gas. Glancing angle X-ray diffraction (GXRD) showed that polycrystalline films with components of TiC and Ti can be prepared using a Ti target. Single-phase TiC films can be synthesized using a TiC target. It was found that the methane gas pressure can control the crystallinity and composition. The root-mean-square (RMS) roughness of the film, as measured by an atomic force microscope (AFM), was lower than 2 nm in all the deposition areas. The film thickness, measured by a-step, was about 92 nm and the growth rate was approximately 3.1 nm/min. Measurements of optical emission spectra were performed to estimate the processing plasma state. (C) 2002 Elsevier Science Inc. All rights reserved.
引用
收藏
页码:221 / 228
页数:8
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