Simulation of High Performance GaN/InGaN Heterojunction Phototransistor

被引：0
作者：
Zhang, Junxi [1 ]
Wang, Yidong [1 ]
Chen, Jun [1 ]
机构：
[1] Soochow Univ, Sch Elect & Informat Engn, Suzhou 215006, Jiangsu, Peoples R China
来源：
FOURTH SEMINAR ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATION | 2018年 / 10697卷
基金：
中国国家自然科学基金;
关键词：
Heterojunction phototransistor; Punch-through voltage; GaN/InGaN;
D O I：
10.1117/12.2309845
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report a two-dimension(2D) simulation of high performance GaN/In0.03Ga0.97N/GaN heterojunction phototransistor(HPT) by Silvaco TCAD and provide a direction for the optimization of GaN/InGaN HPTs. The dark current variation with the change of base parameter is studied in detail, it is found that the device with lower base doping has lower punch-through voltage. The thinner base will also reduce the punch-through voltage. The dark current at breakdown point can be affected by the base carrier concentration and the thickness.
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页数：6
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