Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots

被引：3
作者：
Krestnikov, IL [1 ]
Sakharov, AV
Lundin, WV
Musikhin, YG
Kartashova, AP
Usikov, AS
Tsatsul'nikov, AF
Ledentsov, NN
Alferov, ZI
Soshnikov, IP
Hahn, E
Neubauer, B
Rosenauer, A
Litvinov, D
Gerthsen, D
Plaut, AC
Hoffmann, AA
Bimberg, D
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Univ Karlsruhe, Lab Electronenmikroskopie, D-76128 Karlsruhe, Germany
[3] Univ Exeter, Exeter EX4 4QL, Devon, England
[4] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
SEMICONDUCTORS | 2000年 / 34卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1188011
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
InGaN/GaN structures with dense arrays of InGaN nanodomains were grown by metallorganic chemical vapor deposition. Lasing in vertical direction occurs at low temperatures, indicating ultrahigh gains (similar to 10(5) cm(-1)) in the active region. Fabrication of an effective AlGaN/GaN distributed Bragg reflector with reflectivity exceeding 90% enables vertical lasing at room temperature in structures with a bottom distributed Bragg reflector, despite the absence of a well-reflecting upper mirror. The lasing wavelength is 401 nm, and the threshold excitation density is 400 kW/cm(2). (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：481 / 487
页数：7
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