High resolution DUV inspection system for 150nm generation masks

被引：7

作者：

Tabata, M ^{[1
]}

Tsuchiya, H ^{[1
]}

Sanada, Y ^{[1
]}

Nishizaka, T ^{[1
]}

Hirazawa, H ^{[1
]}

Kobayashi, N ^{[1
]}

Nagai, H ^{[1
]}

Watanabe, T ^{[1
]}

Oohashi, K ^{[1
]}

Inoue, H ^{[1
]}

Nomura, T ^{[1
]}

Ono, A ^{[1
]}

机构：

[1] Toshiba Corp, Ctr Res & Dev, Saiwai Ku, Kawasaki, Kanagawa 2108582, Japan

来源：

19TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2 | 1999年 / 3873卷

关键词：

photolithography mask; OPC; phase shift mask; LSI circuit; defect; inspection system; UV; DUV; optics; resolution; defect sensitivity;

D O I：

10.1117/12.373309

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In order to perform mask inspection with the high reliability for 150 nm-rule and below devices, the inspection system with high resolution is indispensable. The phase shift masks like DUV HT masks must also be inspected with high sensitivity. A next generation mask inspection system MC-3000 which used DUV optics has been developed, in order to achieve these requirement. The wavelength of this optics is 257nm that is shorter than that of current UV inspection systems, and is nearly equal to that of current DUV lithography systems. Short wavelength light and high NA optics obtain high resolution, so the defect detection of 130nm or less is attained. The special issues for the DUV optics were solved by several new techniques. This paper reports the system configuration, basic characteristics for defect detection and inspection performances.

引用

页码：138 / 146

页数：9