Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System

被引：77

作者：

de la Mata, Maria ^{[1
,2
]}

Leturcq, Renaud ^{[3
,4
]}

Plissard, Sebastien R. ^{[5
]}

Rolland, Chloe ^{[3
,10
]}

Magen, Cesar ^{[6
,7
]}

Arbiol, Jordi ^{[1
,2
,8
]}

Caroff, Philippe ^{[3
,9
]}

机构：

[1] CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain

[2] Barcelona Inst Sci & Technol, Campus UAB, Barcelona 08193, Spain

[3] UMR CNRS 8520, Inst Elect Microelect & Nanotechnol, Ave Poincare,CS 60069, F-59652 Villeneuve Dascq, France

[4] Luxembourg Inst Sci & Technol, Mat Res & Technol MRT Dept, 5 Ave Hauts Fourneaux, L-4362 Esch Sur Alzette, Luxembourg

[5] Univ Toulouse, CNRS, Lab Anal & Architecture Syst, 7 Ave Colonel Roche, F-31400 Toulouse, France

[6] Univ Zaragoza, Inst Nanociencia Aragon INA ARAID, Lab Microscopias Avanzadas, Zaragoza 50018, Spain

[7] Univ Zaragoza, Dept Fis Mat Condensada, Zaragoza 50018, Spain

[8] Inst Catalana Recerca & Estudis Avancats ICREA, Barcelona 08010, Catalonia, Spain

[9] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, GPO Box 4, Canberra, ACT 0200, Australia

[10] Univ Paris Saclay, CEA Saclay, CNRS, SPEC,CEA, F-91191 Gif Sur Yvette, France

来源：

NANO LETTERS | 2016年 / 16卷 / 02期

基金：

澳大利亚研究理事会;

关键词：

III-V semiconductor; nanowires; molecular beam epitaxy; Hall measurements; quantum point contact; Cs-corrected scanning transmission electron microscopy; III-V NANOWIRE; BIAS CONDUCTANCE PEAK; COMPOUND SEMICONDUCTOR; QUANTIZED CONDUCTANCE; THERMOELECTRIC FIGURE; HIGH-QUALITY; DEFECT-FREE; GROWTH; GAAS; POLARITY;

D O I：

10.1021/acs.nanolett.5b05125

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. 1 Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12 000 cm(2).V-1.s(-1). Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb "nanosails" as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.

引用

页码：825 / 833

页数：9

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