Thermionic-Field Emission Barrier Between Nanocrystalline Diamond and Epitaxial 4H-SiC

被引：7

作者：

Tadjer, Marko J. ^{[1
]}

Hobart, Karl D. ^{[1
]}

Anderson, Travis J. ^{[1
]}

Feygelson, Tatyana I. ^{[1
]}

Myers-Ward, Rachael L. ^{[1
]}

Koehler, Andrew D. ^{[1
]}

Calle, Fernando ^{[2
]}

Eddy, Charles R., Jr. ^{[1
]}

Gaskill, D. Kurt ^{[1
]}

Pate, Bradford B. ^{[1
]}

Kub, Fritz J. ^{[1
]}

机构：

[1] Naval Res Lab, Washington, DC 20375 USA

[2] Univ Politecn Madrid, Inst Optoelect Syst & Microtechnol, E-28040 Madrid, Spain

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 12期

关键词：

Nanocrystalline diamond; 4H-SiC; Schottky; thermionic emission; field emission;

D O I：

10.1109/LED.2014.2364596

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel Schottky-like rectifying heterojunction between two low-doped widebandgap semiconductors is presented. The conduction mechanism of p-type nanocrystalline diamond and n-type 4H-SiC with a near-unity ideality factor was determined via two-terminal current-voltage measurements as a function of temperature and SiC doping concentration. I-V characteristics at 300 and 510 K were fit at low forward bias with good agreement using thermionic emission theory. A wide temperature range ideality factor analysis revealed a thermionic-field rectifying barrier to low-doped and moderately doped SiC epilayers, which could lead to improved contacts for SiC-based piezoresistors, resonators, and microelectromechanical systems.

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收藏

页码：1173 / 1175

页数：3

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