Anomalous capacitance-voltage characteristics of Al/Al-rich Al2O3/p-Si capacitors and their reconstruction

被引:4
|
作者
Liu, Z. [1 ]
Chen, T. P. [1 ]
Liu, Y. [2 ]
Yang, M. [1 ]
Wong, J. I. [1 ]
Cen, Z. H. [1 ]
Zhang, S. [3 ]
Li, Y. B. [4 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[3] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore
[4] Harbin Inst Technol, Sch Astronaut, Harbin 150080, Peoples R China
基金
新加坡国家研究基金会;
关键词
alumina; aluminium; capacitance; elemental semiconductors; MOS capacitors; silicon;
D O I
10.1063/1.3156028
中图分类号
O59 [应用物理学];
学科分类号
摘要
Anomalous capacitance-voltage (C-V) characteristics of Al/Al-rich Al2O3/p-Si capacitors have been observed. The measured C-V curves exhibit rolloffs and frequency dispersion in the accumulation region and voltage stresses cause both horizontal and vertical shifts of the C-V curves. These anomalous behaviors are mainly due to the large current conduction and the charge trapping in the Al-rich Al2O3 layer. The anomalous C-V characteristics have been reconstructed based on a four-element circuit model. With the reconstructed C-V curves, the capacitance of the Al-rich Al2O3 layer and the charging-induced flatband voltage shift can be determined.
引用
收藏
页数:3
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