Strong dispersion of the surface optical phonon of silicon carbide in the near vicinity of the surface Brillouin zone center

被引:14
作者
Balster, T.
Tautz, F. S.
Polyakov, V. M.
Ibach, H.
Sloboshanin, S.
Oettking, R.
Schaefer, J. A.
机构
[1] Int Univ Bremen, Sch Sci & Engn, D-28725 Bremen, Germany
[2] Tech Univ Ilmenau, Inst Festkorperelektron, D-98684 Ilmenau, Germany
[3] Forschungszentrum Julich, Inst Schichten & Grenzflachen, D-52425 Julich, Germany
[4] Tech Univ Ilmenau, Inst Phys, D-98684 Ilmenau, Germany
[5] Tech Univ Ilmenau, Zentrum Mikro & Nanotechnol, D-98684 Ilmenau, Germany
关键词
electron energy loss spectroscopy; surface optical phonon; silicon carbide;
D O I
10.1016/j.susc.2006.05.031
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The surface optical or Fuchs-Kliewer phonons of the (0 0 1) surface of 3C-SiC and the Si-terminated (0 0 0 1) surfaces of 4H- and 6H-SiC have been investigated with high resolution electron energy loss spectroscopy (HREELS). For each of the SiC polytypes the frequency of the surface optical phonon changes with surface reconstruction, indicating subtle differences in the static polarization at differently reconstructed surfaces. Due to their anisotropy, hexagonal surfaces exhibit a second, much weaker Fuchs-Kliewer mode. For all surfaces under examination, a linear dispersion of the Fuchs-Kliewer mode frequency has been found for wave vectors close to the Gamma-point. This dispersion can be explained by dynamical dipole coupling between atomic oscillators at the surface of the highly polar silicon carbide. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:2886 / 2893
页数:8
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