Design and optimization of high-Q RF passives on SOP-based organic substrates

被引：11

作者：

Dalmia, S ^{[1
]}

Hobbs, JM ^{[1
]}

Sundaram, V ^{[1
]}

Swaminathan, M ^{[1
]}

Lee, SH ^{[1
]}

Ayazi, F ^{[1
]}

White, G ^{[1
]}

Bhattacharya, S ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

52ND ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, 2002 PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/ECTC.2002.1008142

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Integration of passive devices such as inductors and capacitors in packages or on silicon is an important step towards miniaturization and reduction of cost. These passive devices are used as stand-alone components or form an integral part of filters, oscillators, amplifiers, mixers and other RF circuits. This paper discusses the design of high Q inductors and high Q capacitors in organic substrates. Inductors with maximum quality factors in the range of 60180 were obtained at frequencies in the 1-3 GHz band for inductances in the range of 1nH - 20nH. This is the first demonstration of such high Q inductors in organic substrates processed using low-temperature (<200degreesC) processes. The dimensions of all inductors are comparable to a Low Temperature Co-fired Ceramic (LTCC, <900degreesC) and Multi-chip Module Deposition (400degreesC<MCM-D<500degreesC) technology process and well suited for integration in a variety of applications. The paper also discusses the performance of embedded capacitors in organic substrates. Although the Q factors for the capacitors in organic technologies are comparable to ceramic technologies, they do not compare well with the performance of inductors. The results for embedded capacitors show the need for lower loss materials compared to the ones currently used in the low-temperature organic passive technology.

引用

页码：495 / 503

页数：3

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