Recombination Stability in Polycrystalline Cu2ZnSnSe4 Thin Films

被引:0
|
作者
Buffiere, Marie [1 ,2 ]
Brammertz, Guy [1 ]
El Mel, Abdel-Aziz [3 ]
Lenaers, Nick [1 ,2 ]
Ren, Yi [1 ,2 ]
Zaghi, Armin E. [1 ,2 ]
Mols, Yves [1 ]
Koeble, Christine [4 ]
Vleugels, Jef [2 ]
Meuris, Marc [1 ]
Poortmans, Jef [1 ,2 ]
机构
[1] Imec Partner Solliance, Kapeldreef 75, B-3001 Heverlee, Belgium
[2] K U Leuven, Dept Met & Mat Engn, B-3001 Heverlee, Belgium
[3] Univ Mons, Res Inst Mat Sci & Engn, CIRMAP, Chimie Interact Plasma Surface ChIPS, B-7000 Mons, Belgium
[4] Helmholtz Zentrum Berlin HZB Mat & Energie GmbH, Berlin 14109, Germany
关键词
CZTSe; charge carrier lifetime; surface properties; thin films; solar cells;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Time-resolved photoluminescence analysis shows that as-grown Cu2ZnSnSe4 (CZTSe) thin films degrade when they are exposed to air. The analysis of the films prior to degradation reveals relatively long carrier lifetimes. The increase of the recombination rates significantly affects the performance of the related solar cells. Among all the chemical treatments tested to recover the lifetime of the carrier after air exposure, the KCN etching seems to be the most efficient.
引用
收藏
页码:1941 / 1944
页数:4
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