RF CMOS LC-oscillator with source damping resistors

被引：32

作者：

Yun, Seok-Ju ^{[1
]}

Cha, Chong-Yul

Choi, Hyoung-Chul

Lee, Sang-Gug

机构：

[1] Informat & Commun Univ, Taejon 305732, South Korea

[2] Samsung Adv Inst Technol, Giheung Eup 449712, South Korea

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2006年 / 16卷 / 09期

关键词：

complementary metal oxide semiconductor (CMOS); damping resistors; 1/f noise; phase noise; voltage controlled oscillator (VCO);

D O I：

10.1109/LMWC.2006.880700

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter proposes a new method to suppress the 1/f noise contribution of active devices in an oscillator using source damping resistors. The operational mechanism of the proposed source damping resistor method is analyzed through circuit simulation with a complementary LC-oscillator. The reduced 1/f noise leads to the phase noise improvement by suppressing 1/f noise up-conversion to phase noise. The measurement result shows that there is about 6.0 dBc and 4.0 dBc of phase noise improvement at 10 kHz and 100 kHz offset frequency with differential complementary LC-oscillator topology, respectively.

引用

页码：511 / 513

页数：3

共 7 条

[1]

CHA CY, 2005, P IEEE RFIC S, P339

[2] A fully integrated 5.8 GHz U-NII band 0.18-μm CMOS VCO [J].