Fabrication of FinFETs by damage-free neutral-beam etching technology

被引：35

作者：

Endo, Kazuhiko ^{[1
]}

Noda, Shuichi

Masahara, Meishoku

Kubota, Tomohiro

Ozaki, Takuya

Samukawa, Seiji

Liu, Yongxun

Ishii, Kenichi

Ishikawa, Yuki

Sugimata, Etsuro

Matsukawa, Takashi

Takashima, Hidenori

Yamauchi, Hiromi

Suzuki, Eiichi

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] Tohoku Univ, Inst Fluid Sci, Sendai, Miyagi 9808557, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 08期

关键词：

carrier mobility; damaged-free; double-gate MOSFET (DG-MOSFET); neutral beam (NB); utrathin-channel fabrication;

D O I：

10.1109/TED.2006.877035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high aspect ratio and damage-free vertical ultrathin channel for a vertical-type double-gate MOSFET was fabricated by using low-energy neutral-beam etching (NBE). NBE can completely eliminate the charge build-up and photon-radiation damages caused by the plasma. The fabricated FinFETs realize a higher device performance (i.e., higher electron mobility) than that obtained by using a conventional reactive-ion etching. The improved mobility is well explained by the NB-etched atomically flat surface. These results strongly support the effectiveness of the NB technology for nanoscale CMOS fabrication.

引用

页码：1826 / 1833

页数：8

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