Lateral mode dynamics of semiconductor lasers

被引：9
作者：
Gordon, R [1 ]
Xu, J [1 ]
机构：
[1] Univ Toronto, Optoelect & Emerging Technol Lab, Dept Elect Engn, Toronto, ON M5S 3G4, Canada
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1999年 / 35卷 / 12期
基金：
加拿大自然科学与工程研究理事会;
关键词：
beam steering; beam instabilities; carrier diffusion; chaotic behavior; frequency locking; lateral mode; lateral mode dynamics; ridge-waveguide lasers; semiconductor lasers;
D O I：
10.1109/3.806607
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The interaction between two lateral modes in a waveguide semiconductor laser is studied, The effects of carrier diffusion are included into the governing rate equations, A linear stability analysis is used to identify regions of frequency locking between the lateral modes. Numerical integration shows the effects of the diffusion length and other system parameters on the lateral mode dynamics. It is shown that variations in the carrier diffusion length give rise to regimes of single-mode dominance, oscillation, chaos, and frequency locking. Direct experimental observations of higher order lateral modes in lasers exhibiting beam instabilities are presented. Observations of bistable beam steering with hysteresis are presented and explained.
引用
收藏
页码：1904 / 1911
页数：8
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