Optical, structural investigations and band-gap bowing parameter of GaInN alloys

被引：61

作者：

Moret, M. ^{[1
]}

Gil, B. ^{[1
]}

Ruffenach, S. ^{[1
]}

Briot, O. ^{[1
]}

Giesen, Ch. ^{[2
]}

Heuken, M. ^{[2
]}

Rushworth, S. ^{[3
]}

Leese, T. ^{[3
]}

Succi, M. ^{[4
]}

机构：

[1] Univ Montpellier 2, CNRS, GES, UMR 5650, F-34095 Montpellier, France

[2] Aixtron AG, D-52072 Aachen, Germany

[3] SAFC Hitech Ltd, Wirral CH62 3QF, Merseyside, England

[4] Saes Getters Spa, I-20020 Lainate, MI, Italy

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 10期

关键词：

Band Gap; Bowing Parameter; MOCVD; InGaN;

D O I：

10.1016/j.jcrysgro.2009.01.009

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have performed a detailed investigation of the photoluminescence features taken at 2 K on a series of GaxIn1-xN alloys grown by metal-organic vapour-phase epitaxy through the whole composition range. The evolution of the photoluminescence lineshape of GaInN alloys in the indium-rich region is dominated by doping effects rather than by band-gap tailing effects correlated to existence of random chemical crystal inhomogeneities. The lineshape of the photoluminescence indicates a residual electron concentration of about 10(18)-10(19) cm(-3) in the bulk part of the epilayers. The value we get for the bowing parameter is b=2.8 eV. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2795 / 2797

页数：3

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