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Small-signal modulation and 10 Gb/s data transmission by microdisk lasers based on InGaAs/GaAs quantum well-dots
被引:0
|作者:
Kryzhanovskaya, N., V
[1
,2
]
Moiseev, E., I
[1
]
Zubov, F., I
[2
]
Maximov, M., V
[2
]
Blokhin, S. A.
[3
]
Kalyuzhnyy, N. A.
[3
]
Mintairov, S. A.
[3
]
Kulagina, M. M.
[3
]
Ledentsov, N., Jr.
[4
]
Ledentsov, N.
[4
]
Zhukov, A. E.
[1
]
机构:
[1] Natl Res Univ Higher Sch Econ, St Petersburg 190008, Russia
[2] Alferov Univ, St Petersburg 194021, Russia
[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[4] VI Syst GmbH, D-10623 Berlin, Germany
来源:
SEMICONDUCTOR LASERS AND LASER DYNAMICS IX
|
2020年
/
11356卷
基金:
俄罗斯科学基金会;
关键词:
Microdisk laser;
modulation;
data transmission;
D O I:
10.1117/12.2554552
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We show that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth. A maximum 3-dB modulation frequency of about 6 GHz was found. The K-limited maximal frequency of 13 GHz was estimated from the modulation response analysis. The experimental values of the energy-to-data reaches 1.5 pJ/bit for the smallest diameter under study (10 mu m). A 23 mu m in diameter microlaser exhibits open eye diagram up to 12.5 Gbit/s and is capable of error-free 10 Gbit/s data transmission at 30 degrees C without temperature stabilization. Our results demonstrate the potential to achieve miniature high-speed on-chip light sources for optical communication applications using lasers with a diameter of only a few micrometers.
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