Theory of the nonequilibrium Kondo effect in a quantum dot

被引：5
|
作者：
Fujii, T [1 ]
Ueda, K
机构：
[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
[2] Japan Atom Energy Res Inst, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 22卷 / 1-3期
关键词：
nonequilibrium Kondo effect; quantum dot;
D O I：
10.1016/j.physe.2003.12.054
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Based on the recent approach to the Kondo effect in a dot with a finite bias voltage by using the perturbation theory, we discuss the new peak found in the differential conductance, in addition to the zero-bias peak. The new peak originate from the splitting of the Kondo resonance under a finite voltage which may be measured by the recent proposed three-terminal quantum dot. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：498 / 501
页数：4
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