Structural and microstructural characterization of GaN thin films and GaN-based heterostructures grown on sapphire substrates

被引：0

作者：

Razeghi, M

Kung, P

Zhang, X

Walker, D

Saxler, A

Lim, KY

Kim, KS

机构：

[1] WRIGHT LAB,MAT DIRECTORATE,WRIGHT PATTERSON AFB,OH

[2] JEON BUK NATL UNIV,DEPT PHYS,JEONJU 560756,SOUTH KOREA

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1997年 / 30卷

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The primary cause for x-ray rocking curve broadening in epitaxial GaN grown on basal plane sapphire is determined by studying the reciprocal space maps of both symmetric and asymmetric propagation of threding dislocations in GaN/AlGaN-based heterostructures is studied through cross sectional transmission electron microscopy. A density of screw and mixed dislocations less than 10(7) cm(-2) in these heterostructures is achieved.

引用

页码：S1 / S6

页数：6

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