Nanowire-induced Wurtzite InAs Thin Film on Zinc-Blende InAs Substrate

被引：35

作者：

Bao, Jiming ^{[2
]}

Bell, David C. ^{[3
,4
]}

Capasso, Federico ^{[3
]}

Erdman, Natasha ^{[5
]}

Wei, Dongguang ^{[6
]}

Froberg, Linus ^{[1
]}

Martensson, Thomas ^{[1
]}

Samuelson, Lars ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

[2] Univ Houston, Dept Elect & Comp Engn, Houston, TX 77204 USA

[3] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA

[4] Harvard Univ, Ctr Nanoscale Syst, Cambridge, MA 02138 USA

[5] JEOL USA, Peabody, MA 01960 USA

[6] Carl Zeiss SMT Inc, Peabody, MA 01960 USA

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 36期

基金：

美国国家科学基金会; 瑞典研究理事会;

关键词：

TWINNING SUPERLATTICES; ELECTRONIC-STRUCTURE; GROWTH; INP; HETEROSTRUCTURES; POLYTYPISM; RADIATION; WHISKERS; SILICON; FIELD;

D O I：

10.1002/adma.200900617

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

InAs pyramids and platelets on a zinc-blende InAs substrate are found to exhibit a wurtzite crystal structure. induced by wurtzite InAs nanowires, wurtzite InAs thin film and its associated zinc-blende/wurtzite heterocrystalline heterostructures may open up new opportunities in band-gap engineering and related device applications.

引用

收藏

页码：3654 / +

页数：6

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