A silicon-on-insulator photonic wire based evanescent field sensor

被引：228

作者：

Densmore, A. ^{[1
]}

Xu, D. X. ^{[1
]}

Waldron, P. ^{[1
]}

Janz, S. ^{[1
]}

Cheben, P. ^{[1
]}

Lapointe, J. ^{[1
]}

Delage, A. ^{[1
]}

Lamontagne, B. ^{[1
]}

Schmid, J. H. ^{[1
]}

Post, E. ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 21-24期

关键词：

biomedical transducers; integrated optics; nanotechnology; silicon-on-insulator technology; SENSITIVITY; BIOSENSOR;

D O I：

10.1109/LPT.2006.887374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a new, highly sensitive evanescent field sensor using silicon-on-insulator (SOI) photonic wire waveguides. Theoretical analysis shows that thin SOI waveguides can provide higher sensitivity over devices based in all other common planar waveguide material systems for the probing of both thin adsorbed biomolecular layers and bulk homogeneous solutions. A Si photonic wire waveguide was incorporated into a Mach-Zehnder interferometer based sensor, configured to monitor the index change of a homogeneous solution. High effective index change of 0.31 per refractive index unit (RIU) change of the solution was measured, confirming theoretical predictions.

引用

页码：2520 / 2522

页数：3

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