Determination of composition and energy gaps of GaInNAsSb layers grown by MBE

被引：15

作者：

Aho, A. ^{[1
]}

Korpijarvi, V. -M. ^{[1
]}

Isoaho, R. ^{[1
]}

Malinen, P. ^{[1
]}

Tukiainen, A. ^{[1
]}

Honkanen, M. ^{[2
]}

Guina, M. ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, Korkeakoulunkatu 3, FI-33720 Tampere, Finland

[2] Tampere Univ Technol, Dept Mat Sci, Korkeakoulunkatu 6, FI-33720 Tampere, Finland

来源：

JOURNAL OF CRYSTAL GROWTH | 2016年 / 438卷

关键词：

Characterization; Molecular beam epitaxy; Antimonides; Nitrides; Semiconducting III-V materials; BAND PARAMETERS; GAIN;

D O I：

10.1016/j.jcrysgro.2015.12.026

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present a method to accurately determine the composition of GaInNAsSb heterostructures and a modified band anti-crossing model to calculate the corresponding bandgaps. The composition determination method is based on combining x-ray diffractometry and energy dispersive x-ray spectroscopy measurements. The modified band anti-crossing model was derived from the model known for GaInNAs and using band-gap composition relations for GalnAs, GaInSb, InAsSb and GaAsSb. The model parameters were defined by fitting with experimental bandgap data retrieved from photoluminescence. For validation and data fitting we used experimental samples with N composition in the range of 0-0.06, In composition from 0 to 0.17, and Sb composition in the range of 0-0.08. All samples were thermally annealed to minimize the band gap shift caused by the short range ordering effects in GaInNAsSb crystal. The modified model yields an excellent fit to the experimental band gap data with an accuracy of similar to 20 meV, and is a practical tool for designing, fabricating and analyzing optoelectronics devices. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：49 / 54

页数：6

共 27 条

[1] BAND-GAPS AND REFRACTIVE-INDEXES OF ALGAASSB, GAINASSB, AND INPASSB - KEY PROPERTIES FOR A VARIETY OF THE 2-4-MU-M OPTOELECTRONIC DEVICE APPLICATIONS [J].