Deposition of Er:YAG (YAP) layers by subpicosecond and nanosecond KrF excimer laser ablation

被引:12
|
作者
Jelinek, M
Klini, A
Grivas, C
Lancok, J
Studnicka, V
Chval, J
Macková, A
Fotakis, C
机构
[1] Acad Sci Czech Republ, Inst Phys, Prague 18221 8, Czech Republic
[2] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Laser & Applicat Div, Iraklion 71110, Crete, Greece
[3] ASCR, Inst Phys Nucl, Prague, Czech Republic
关键词
thin films; subpicosecond laser; pulsed laser deposition; Er : YAG; Er : YAP;
D O I
10.1016/S0169-4332(02)00352-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Thin films of Er:YAG and Er:YAP were deposited by subpicosecond (450 fs) and nanosecond (20 ns) KrF laser (lambda = 248 nm) on YAG, YAP, fused silica, silicon and sapphire substrates. Laser spot size, energy density, substrate temperature and deposition ambient (vacuum and oxygen) were varied. Comparison of growth rate, morphology, composition, crystallinity and adhesion of the films grown by subpicosecond and nanosecond deposition is presented. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:416 / 420
页数:5
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