Ion-beam induced chemical and structural modification in polymers

被引:49
|
作者
Guenther, M
Gerlach, G
Suchaneck, G
Sahre, K
Eichhorn, KJ
Wolf, B
Deineka, A
Jastrabik, L
机构
[1] Dresden Univ Technol, Inst Solid State Elect, D-01062 Dresden, Germany
[2] Inst Polymer Res Dresden, D-01069 Dresden, Germany
[3] Dresden Univ Technol, Inst Crystallog & Solid State Phys, D-01062 Dresden, Germany
[4] Acad Sci Czech Republ, Inst Phys, Prague 18221 8, Czech Republic
来源
SURFACE & COATINGS TECHNOLOGY | 2002年 / 158卷
关键词
polyimide; polyethersulfone; hardness; conductivity; polymer structure; ion implantation;
D O I
10.1016/S0257-8972(02)00229-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In order to increase the sensitivity to moisture uptake of polyimide (PI) and polyethersulforre films applied in bimorphic humidity sensors 50, 130 and 180 keV boron ions with irradiation doses between 10(13) and 10(16) B+/cm(2) were implanted. A complex investigation of the following features has been carried out: chemical changes in the surface regions by attenuated total reflection-FFIR spectroscopy, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS); optical properties by spectroscopic ellipsometry; hardness and elastic modulus by depth-sensing low-load indentation technique; conductivity of modified polymer films. It could be shown, that the partial destruction of chemical bonding under ion bombardment leads to the creation of new amorphous and graphite-like structures, which increase the surface film conductivity by several orders of magnitude, and enhances the sensitivity of these polymer films to moisture uptake. The ion-beam irradiation destroys the anisotropic features of the refractive index of PI layers leading to its isotropization. Radiation-induced changes in the layer structure result in an increase of the hardness and elastic modulus of the modified layers up to ten and six times, respectively. The hardness and refractive index depth profiles were determined. The detectable effective modification depth estimated from the depth profiles is 250-300 nm at an ion energy of 50 keV and 400-450 nm at an ion energy of 180 keV. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:108 / 113
页数:6
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