Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence

被引：3
作者：
Rieger, Torsten [1 ,2 ]
Riedl, Thomas [3 ]
Neumann, Elmar [2 ,4 ]
Gruetzmacher, Detlev [1 ,2 ]
Lindner, Joerg K. N. [3 ]
Pawlis, Alexander [1 ,2 ]
机构：
[1] Forschungszentrum Julich, Peter Grunberg Inst 9, Wilhelm Johnen Str, D-52425 Julich, Germany
[2] Forschungszentrum Julich, JARA FIT, Wilhelm Johnen Str, D-52425 Julich, Germany
[3] Univ Paderborn, Dept Phys, Warburger Str 100, D-33098 Paderborn, Germany
[4] Forschungszentrum Julich, Peter Grunberg Inst 8, Wilhelm Johnen Str, D-52425 Julich, Germany
来源：
ACS APPLIED MATERIALS & INTERFACES | 2017年 / 9卷 / 09期
关键词：
quantum well; strain compensation; molecular beam epitaxy; geometric phase analysis; molecular statics simulations; critical thickness; BEAM ELECTRON-DIFFRACTION; RESOLUTION; ZNSE; CDSE; DEFECTS; EPITAXY; STRESS;
D O I：
10.1021/acsami.6b15824
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The lattice mismatch between CdSe and ZnSe is known to limit the thickness of ZnSe/CdSe quantum wells on GaAs (001) substrates to about 2-3 monolayers. We demonstrate that this thickness can be enhanced significantly by using In0.12Ga0.88As pseudo substrates, which generate alternating tensile and compressive strains in the ZnSe/CdSe/ZnSe layers resulting in an efficient strain compensation. This method enables to design CdSe/ZnSe quantum wells with CdSe thicknesses ranging from 1 to 6 monolayers, covering the whole visible spectrum. The strain compensation effect is investigated by high resolution transmission electron microscopy and supported by molecular statics simulations. The model approach with the supporting experimental measurements is sufficiently general to be also applied to other highly mismatched material combinations for the design of advanced strained heterostructures.
引用
收藏
页码：8371 / 8377
页数：7
相关论文
共 32 条
  • [1] Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography
    Beche, A.
    Rouviere, J. L.
    Barnes, J. P.
    Cooper, D.
    [J]. ULTRAMICROSCOPY, 2013, 131 : 10 - 23
  • [2] Atomistic study of zinc-blends CdS, CdSe, ZnS, and ZnSe from molecular dynamics
    Benkabou, F
    Aourag, H
    Certier, M
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 2000, 66 (01) : 10 - 16
  • [3] DIRECT MEASUREMENT OF LOCAL LATTICE-DISTORTIONS IN STRAINED LAYER STRUCTURES BY HREM
    BIERWOLF, R
    HOHENSTEIN, M
    PHILLIPP, F
    BRANDT, O
    CROOK, GE
    PLOOG, K
    [J]. ULTRAMICROSCOPY, 1993, 49 (1-4) : 273 - 285
  • [4] ELASTIC-CONSTANTS OF CDSE AT LOW-TEMPERATURE
    BONELLO, B
    FERNANDEZ, B
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1993, 54 (02) : 209 - 212
  • [5] Strain measurements by convergent-beam electron diffraction:: The importance of stress relaxation in lamella preparations
    Clément, L
    Pantel, R
    Kwakman, LFT
    Rouvière, JL
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (04) : 651 - 653
  • [6] Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope
    Cooper, David
    Denneulin, Thibaud
    Bernier, Nicolas
    Beche, Armand
    Rouviere, Jean-Luc
    [J]. MICRON, 2016, 80 : 145 - 165
  • [7] Influence of ZnSe capping of CdSe layers in the growth mode of ZnCdMgSe/CdSe/ZnCdMgSe heterostructures
    Dario Alfaro-Martinez, Adrian
    Hernandez-Calderon, Isaac
    Tamargo, Maria C.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 34 (04):
  • [8] Strain compensated CdSe/ZnSe/ZnCdMgSe quantum wells as building blocks for near to mid-IR intersubband devices
    De Jesus, Joel
    Chen, Guopeng
    Hernandez-Mainet, Luis C.
    Shen, Aidong
    Tamargo, Maria C.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2015, 425 : 207 - 211
  • [9] PROCESS-INDUCED MECHANICAL-STRESS IN ISOLATION STRUCTURES STUDIED BY MICRO-RAMAN SPECTROSCOPY
    DEWOLF, I
    NORSTROM, H
    MAES, HE
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (07) : 4490 - 4500
  • [10] Non-destructive determination of local strain with 100-nanometre spatial resolution
    Di Fonzo, S
    Jark, W
    Lagomarsino, S
    Giannini, C
    De Caro, L
    Cedola, A
    Müller, M
    [J]. NATURE, 2000, 403 (6770) : 638 - 640
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