Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress

被引：0

作者：

Wang, Yingzhe ^{[1
]}

Zheng, Xuefeng ^{[1
]}

Zhu, Jiaduo ^{[1
]}

Xu, Shengrui ^{[1
]}

Ma, Xiaohua ^{[1
]}

Zhang, Jincheng ^{[1
]}

Hao, Yue ^{[1
]}

Xu, Linlin ^{[2
]}

Dai, Jiangnan ^{[2
]}

Li, Peixian ^{[3
]}

机构：

[1] Xidian Univ, Key Lab Wide Bandgap Semicond Mat & Devices, Sch Microelect, Xian, Peoples R China

[2] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan, Peoples R China

[3] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian, Peoples R China

来源：

2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2020年

基金：

中国国家自然科学基金;

关键词：

AlGaN; deep level transient spectroscopy; defect; DUV LEDs; stress; DISLOCATION;

D O I：

10.1109/irps45951.2020.9128350

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work provides an intensive investigation of defect evolution in the degradation process induced by electrical stress of AlGaN-based deep ultraviolet light emitting diodes. The reduced optical power and the increased leakage current are directly related to a new generated electron trap B with an energy level in the range of 0.25-0.38 eV, which is extracted from deep level transient spectroscopy (DLTS) measurement. The significantly increased "yellow" band peak in PL spectra and the linear relation between DLTS signal and pulse width indicate that, defect B corresponds to Ga vacancy along dislocation. The increase of Ga vacancy is accompanied with a decrease of hole trap A with energy level of 0.29-0.34 eV. Combining with first-principle calculation and experimental results, it is demonstrated that the generation of Ga vacancy is originated from the variation in Mg-related defect along dislocation.

引用

页数：4

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