Contributions to the effective work function of platinum on hafnium dioxide

被引：193

作者：

Schaeffer, JK ^{[1
]}

Fonseca, LRC ^{[1
]}

Samavedam, SB ^{[1
]}

Liang, Y ^{[1
]}

Tobin, PJ ^{[1
]}

White, BE ^{[1
]}

机构：

[1] Freescale Semicond Inc, Adv Prod Res & Dev Lab, Austin, TX 78721 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 10期

关键词：

D O I：

10.1063/1.1786656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The intrinsic and extrinsic contributions to Fermi level pinning of platinum (Pt) electrodes on hafnium dioxide (HfO2) gate dielectrics are investigated by examining the impact of oxygen and forming gas anneals on the effective work function of Pt-HfO2-silicon capacitors. The effective platinum work function is similar to4.6 eV when annealed in forming gas. However, diffusion of oxygen to the Pt/HfO2 interface increases the platinum work function to a value of similar to4.9 eV. Subsequent annealing in forming gas returns the platinum work function to a value comparable to that measured prior to the oxygen anneal. The effective platinum work functions are compared to the prediction of the metal induced gap states (MIGS) model. The presence of interfacial oxygen vacancies or platinum-hafnium bonds is believed to be responsible for a degree of pinning that is stronger than predicted from the MIGS model alone. (C) 2004 American Institute of Physics.

引用

页码：1826 / 1828

页数：3

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