Enhanced energy-storage performance and electrocaloric effect in compositionally graded Pb(1-3x/2)LaxZr0.85Ti0.15O3 antiferroelectric thick films

被引:54
作者
Zhao, Ye [1 ]
Hao, Xihong [1 ]
Zhang, Qi [2 ,3 ]
机构
[1] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China
[2] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R China
[3] Cranfield Univ, Dept Mfg & Mat, Cranfield MK43 0AL, Beds, England
基金
中国国家自然科学基金;
关键词
Compositionally gradient; PLZT thick films; Energy-storage performance; ECE; FERROELECTRIC PHASE-TRANSITION; ELECTRICAL-PROPERTIES; DIELECTRIC-PROPERTIES; ZIRCONATE-TITANATE; CERAMICS; MICROSTRUCTURE;
D O I
10.1016/j.ceramint.2015.09.122
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The compositionally graded multilayer Pb((1-3x/2))LaxZr0.85Ti0.15O3 (PLZT) antiferroelectric (APE) thick films were deposited on LaNiO3/Si (100) substrates by using a sol-gel method. The effect of gradient sequence on dielectric properties, energy-storage performance, and electrocaloric effect (ECE) was investigated in detail. It is found that the compositionally graded films exhibited a significant enhancement in dielectric properties, energy-storage performance and ECE, which was, in contrast to the single-composition PLZT film, contributed by the strain and the gradient of polarization near the interfaces between the adjacent layers. A recoverable energy-storage density of 44 J/cm(3) and efficiency of 71% was obtained in the up-graded PLZT APE thick film at 1950 kV/cm. A giant reversible adiabatic temperature change of Delta T=28 degrees C at room temperature at 900 kV/cm was also achieved in the up-graded film. Moreover, all the thick films displayed a small leakage current density below 10(-6) A/cm(2) at room temperature. Thus, the compositionally graded PLZT APE thick films with a large recoverable energy-storage density and a giant ECE could be a potential candidate for the applications in high energy-storage density capacitors and cooling devices. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:1679 / 1687
页数:9
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