Indentation-induced low-temperature solid-phase crystallization of Si1-xGex (x=0-1) on insulator

被引：22

作者：

Toko, Kaoru ^{[1
]}

Sadoh, Taizoh ^{[1
]}

Miyao, Masanobu ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 19期

关键词：

amorphous semiconductors; crystallisation; Ge-Si alloys; indentation; nucleation; semiconductor growth; semiconductor thin films; INDUCED LATERAL CRYSTALLIZATION; THIN-FILM TRANSISTORS; AMORPHOUS-SILICON; STRAIN; SI; LAYERS;

D O I：

10.1063/1.3136857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indentation-induced solid-phase crystallization (SPC) was proposed to achieve low-temperature growth of Si1-xGex (x=0-1) on insulator. Crystal nucleation was enhanced at the indented positions due to the stress effect, which triggered the lateral SPC. As a result, large Si1-xGex (x=0-1) crystal regions (>2 mu m) were achieved on insulator at low temperatures (< 590 degrees C). The growth kinetics for this catalyst metal-free process, i.e., activation energies for nucleation and lateral growth, are presented as a function of the Ge fraction (x).

引用

页数：3

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