Root Causes Investigation of Catastrophic Optical Bulk Damage in High-Power InGaAs-AlGaAs Strained QW Lasers

被引:3
作者
Sin, Yongkun [1 ]
Lingley, Zachary [1 ]
Ayvazian, Talin [1 ]
Brodie, Miles [1 ]
Ives, Neil [1 ]
机构
[1] Aerosp Corp, Elect & Photon Lab, El Segundo, CA 90245 USA
来源
NOVEL IN-PLANE SEMICONDUCTOR LASERS XVII | 2018年 / 10553卷
关键词
High power laser; single-mode laser; multi-mode laser; reliability; failure mode; degradation mechanism; COBD; INDEX;
D O I
10.1117/12.2287288
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-power single-mode (SM) and multi-mode (MM) InGaAs-AlGaAs strained quantum well (QW) lasers are critical components for both terrestrial and space satellite communications systems. Since these lasers predominantly fail by catastrophic and sudden degradation due to COD, it is especially crucial for space satellite applications to investigate reliability, failure modes, and degradation mechanisms of these lasers. Our group reported a new failure mode in MM and SM InGaAs-AlGaAs strained QW lasers in 2009 and 2016, respectively. Our group also reported in 2017 that bulk failure due to catastrophic optical bulk damage (COBD) is the dominant failure mode of both SM and MM lasers that were subject to long-term life-tests. For the present study, we report root causes investigation of COBD by performing long-term life tests followed by failure mode analysis (FMA) using various micro-analytical techniques including electron beam induced current (EBIC), time-resolved electroluminescence (EL), focused ion beam (FIB), high-resolution transmission electron microscopy (TEM), and deep level transient spectroscopy (DLTS). Our life-tests with accumulated test hours of over 25,000 hours for SM lasers and over 35,000 hours for MM lasers generated a number of COBD failures with various failure times. EBIC techniques were employed to study dark line defects (DLDs) generated in SM COBD failures stressed under different test conditions. FIB and high-resolution 1EM were employed to prepare cross sectional and plan view TEM specimens to study DLD areas (dislocations) in post-aged SM lasers. Time-resolved EL techniques were employed to study initiation and progressions of dark spots and dark lines in real time as MM lasers were aged. Lastly, to investigate precursor signatures of failure and degradation mechanisms responsible for COBD in both SM and MM lasers, we employed DLTS techniques to study a role that electron traps (non-radiative recombination centers) play in degradation of these lasers. Our in-depth root causes investigation results are reported.
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页数:16
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共 25 条
  • [1] High Reliability Demonstrated on High Power and High Brightness Diode Lasers
    Bao, L.
    Kanskar, M.
    DeVito, M.
    Hemenway, M.
    Urbanek, W.
    Grimshaw, M.
    Chen, Z.
    Dong, W.
    Guan, X.
    Zhang, S.
    Dawson, D.
    Martinsen, R.
    [J]. HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS XIII, 2015, 9348
  • [2] 29.5W Continuous Wave Output from 100um Wide Laser Diode
    Demir, Abdullah
    Peters, Matthew
    Duesterberg, Richard
    Rossin, Victor
    Zucker, Erik
    [J]. HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS XIII, 2015, 9348
  • [3] High-Volume Manufacturing of 8XXnm-10XXnm Single Emitter Pumps by MBE Growth Technique
    Gapontsev, V.
    Moshegov, N.
    Berezin, I.
    Trubenko, P.
    Komissarov, A.
    Miftakhutdinov, D.
    Berishev, I.
    Strougov, N.
    Chuyanov, V.
    Raisky, O.
    Ovtchinnikov, A.
    [J]. HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS XII, 2014, 8965
  • [4] CATASTROPHIC DAMAGE OF ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASER MATERIAL
    HENRY, CH
    PETROFF, PM
    LOGAN, RA
    MERRITT, FR
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3721 - 3732
  • [5] Temperature-dependent Sellmeier equation for the refractive index of AlxGa1-xAs
    Kim, Jang Pyo
    Sarangan, Andrew M.
    [J]. OPTICS LETTERS, 2007, 32 (05) : 536 - 538
  • [6] RECOMBINATION ENHANCED DEFECT REACTIONS
    KIMERLING, LC
    [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1391 - 1401
  • [7] FEMTOSECOND MEASUREMENTS OF THE NONRESONANT NONLINEAR INDEX IN ALGAAS
    LAGASSE, MJ
    ANDERSON, KK
    WANG, CA
    HAUS, HA
    FUJIMOTO, JG
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (05) : 417 - 419
  • [8] QUANTITATIVE MEASUREMENTS OF RECOMBINATION ENHANCED DISLOCATION GLIDE IN GALLIUM-ARSENIDE
    MAEDA, K
    SATO, M
    KUBO, A
    TAKEUCHI, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 161 - 168
  • [9] INFRARED MICROSCOPY STUDIES ON HIGH-POWER INGAAS-GAAS-INGAP LASERS WITH GA2O3 FACET COATINGS
    PASSLACK, M
    BETHEA, CG
    HOBSON, WS
    LOPATA, J
    SCHUBERT, EF
    ZYDZIK, GJ
    NICHOLS, DT
    DEJONG, JF
    CHAKRABARTI, UK
    DUTTA, NK
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) : 110 - 116
  • [10] Improved brightness on broad-area single emitter (BASE) modules
    Pawlik, Susanne
    Guarino, Andrea
    Matuschek, Nicolai
    Baettig, Rainer
    Arlt, Sebastian
    Lu, Denis
    Zayer, Nadhum
    Greatrex, Jeffrey
    Sverdlov, Boris
    Valk, Bernd
    Lichtenstein, Norbert
    [J]. HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VII, 2009, 7198