In-Ga-Zn oxide nanoparticles acting as an oxide semiconductor material synthesized via a coprecipitation-based method

被引：28

作者：

Fukuda, Nobuko ^{[1
]}

Watanabe, Yuichi ^{[1
]}

Uemura, Sei ^{[1
]}

Yoshida, Yuji ^{[2
]}

Nakamura, Takashi ^{[3
]}

Ushijima, Hirobumi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Flexible Elect Res Ctr, Tsukuba, Ibaraki 3058565, Japan

[2] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta Technol RCPVT, Tsukuba, Ibaraki 3058565, Japan

[3] Natl Inst Adv Ind Sci & Technol, Res Ctr Compact Chem Syst CCS, Sendai, Miyagi 9808551, Japan

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2014年 / 2卷 / 13期

关键词：

THIN-FILM TRANSISTORS; GALLIUM; TEMPERATURE; FABRICATION;

D O I：

10.1039/c3tc31944j

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium-gallium-zinc oxide (IGZO) nanoparticles that can act as an oxide semiconductor were successfully synthesized using a coprecipitation method via the hydrolysis of urea in aqueous media containing ethylene glycol. The resulting IGZO precursor nanoparticles contain crystalline indium hydroxide and zinc-gallium carbonate. Sintering the precursor nanoparticles at temperatures higher than 300 degrees C provides amorphous IGZO nanoparticles, while poly-crystalline IGZO nanoparticles are obtained at temperatures above 700 degrees C. Poly-crystalline IGZO ink was prepared using the IGZO nanoparticles for the fabrication of a thin film transistor (TFT). Annealing at temperatures higher than 400 degrees C for 30 min gives the desired TFT switching properties due to the removal of the organic fraction contained in the ink.

引用

页码：2448 / 2454

页数：7

共 38 条

[1] Hybrid gadolinium oxide nanoparticles:: Multimodal contrast agents for in vivo imaging [J].

Bridot, Jean-Luc ;

Faure, Anne-Charlotte ;

Laurent, Sophie ;

Riviere, Charlotte ;

Billotey, Claire ;

Hiba, Bassem ;

Janier, Marc ;

Josserand, Veronique ;

Coll, Jean-Luc ;

Vander Elst, Luce ;

Muller, Robert ;

Roux, Stephane ;

Perriat, Pascal ;

Tillement, Olivier .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2007, 129 (16) :5076-5084

[2] Electrical Resistivity of Assembled Transparent Inorganic Oxide Nanoparticle Thin Layers: Influence of Silica, Insulating Impurities, and Surfactant Layer Thickness [J].

Bubenhofer, Stephanie B. ;

Schumacher, Christoph M. ;

Koehler, Fabian M. ;

Luechinger, Norman A. ;

Sotiriou, Georgios A. ;

Grass, Robert N. ;

Stark, Wendelin J. .

ACS APPLIED MATERIALS & INTERFACES, 2012, 4 (05) :2664-2671

[3]

Chang H, 2008, REV ADV MATER SCI, V18, P736

[4] Novel Zinc Oxide Inks with Zinc Oxide Nanoparticles for Low-Temperature, Solution-Processed Thin-Film Transistors [J].

Cho, Song Yun ;

Kang, Young Hun ;

Jung, Jun-Young ;

Nam, So Youn ;

Lim, Jongsun ;

Yoon, Sung Cheol ;

Choi, Dong Hoon ;

Lee, Changjin .

CHEMISTRY OF MATERIALS, 2012, 24 (18) :3517-3524

[5]

Dean J.A., 2001, Lange's Handbook of Chemistry, V15

[6] Self-organization of nanosized gold particles [J].

Fink, J ;

Kiely, CJ ;

Bethell, D ;

Schiffrin, DJ .

CHEMISTRY OF MATERIALS, 1998, 10 (03) :922-926

[7] Analysis of Adsorption and Binding Behaviors of Silver Nanoparticles onto a Pyridyl-Terminated Surface Using XPS and AFM [J].

Fukuda, Nobuko ;

Ishida, Naoyuki ;

Nomura, Kenichi ;

Wang, Tong ;

Tamada, Kaoru ;

Ushijima, Hirobumi .

LANGMUIR, 2011, 27 (21) :12916-12922

[8] Electrical Properties of the Thin-Film Transistor With an Indium-Gallium-Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition [J].

Furuta, Mamoru ;

Kawaharamura, Toshiyuki ;

Wang, Dapeng ;

Toda, Tatsuya ;

Hirao, Takashi .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (06) :851-853

[9] Ce3+, Fe3+-induced optical absorption in Ce, Fe:YAG prepared by coprecipitation [J].

Gomi, M ;

Kanie, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (03) :1798-1801

[10] Reduced Contact Resistance in Inkjet Printed High-Performance Amorphous Indium Gallium Zinc Oxide Transistors [J].

Hennek, Jonathan W. ;

Xia, Yu ;

Everaerts, Ken ;

Hersam, Mark C. ;

Facchetti, Antonio ;

Marks, Tobin J. .

ACS APPLIED MATERIALS & INTERFACES, 2012, 4 (03) :1614-1619

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