Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches

被引：128

作者：

Chen, Lingxiu ^{[1
,2
]}

He, Li ^{[1
,3
]}

Wang, Hui Shan ^{[1
,4
]}

Wang, Haomin ^{[1
]}

Tang, Shujie ^{[1
,5
]}

Cong, Chunxiao ^{[6
,7
]}

Xie, Hong ^{[1
]}

Li, Lei ^{[1
,4
]}

Xia, Hui ^{[8
]}

Li, Tianxin ^{[8
]}

Wu, Tianru ^{[1
]}

Zhang, Daoli ^{[3
]}

Deng, Lianwen ^{[4
]}

Yu, Ting ^{[6
]}

Xie, Xiaoming ^{[1
,2
]}

Jiang, Mianheng ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China

[2] ShanghaiTech Univ, Sch Phys Sci & Technol, 319 Yueyang Rd, Shanghai 200031, Peoples R China

[3] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China

[4] Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China

[5] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

[6] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, 21 Nanyang Link, Singapore 637371, Singapore

[7] Fudan Univ, Sch Informat Sci & Technol, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

[8] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China

来源：

NATURE COMMUNICATIONS | 2017年 / 8卷

基金：

美国国家科学基金会;

关键词：

RAMAN-SPECTROSCOPY; ATOMIC LAYERS; GROWTH;

D O I：

10.1038/ncomms14703

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs.

引用

页数：6

共 35 条

[11] Massive Dirac Fermions and Hofstadter Butterfly in a van der Waals Heterostructure [J].