Angle dependent interlayer magnetoresistance in multilayer graphene stacks

被引：5
|
作者：
Bodepudi, S. C. [1 ]
Wang, Xiao [2 ]
Pramanik, S. [1 ]
机构：
[1] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB T6G 2V4, Canada
[2] UESTC, Sch Microelect & Solid State Elect, Chengdu, Sichuan, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2015年 / 118卷 / 16期
基金：
加拿大自然科学与工程研究理事会;
关键词：
CHEMICAL-VAPOR-DEPOSITION; LARGE-AREA; GRAPHITE; NICKEL; FILMS;
D O I：
10.1063/1.4934642
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Interlayer magnetoresistance (ILMR) effect is explored in a vertical stack of weakly coupled multilayer graphene as grown by chemical vapor deposition. This effect has been characterized as a function of temperature and tilt angle of the magnetic field with respect to the interlayer current. To our knowledge, this is the first experimental report on angle dependent ILMR effect in graphitic systems. Our data agree qualitatively with the existing theories of ILMR in multilayer massless Dirac Fermion systems. However, a sharper change in ILMR has been observed as the tilt angle of the magnetic field is varied. A physical explanation of this effect is proposed, which is consistent with our experimental scenario. (C) 2015 AIP Publishing LLC.
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页数：10
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