Lithography using a compact plasma focus electron source

被引:0
作者
Lee, P
Feng, X
Zhang, GX
Liu, MH
Lee, S
机构
来源
MICROLITHOGRAPHIC TECHNIQUES IN IC FABRICATION | 1997年 / 3183卷
关键词
plasma focus; electron beam; lithography;
D O I
10.1117/12.280538
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A 1.6kJ compact plasma focus source operated in neon at 5 Hz was demonstrated as an electron source for microlithography. Lithographs were obtained by exposing the resist (PMMA) to an electron beam emitted from the plasma focus through an extraction channel in its anode with a mask in contact with the resist. The total energy in the beam was estimated from the lithographs to be > 20mJ per shot with electron energy >20keV, and >1J with electron energy similar to 1OkeV, The electron beam from this plasma focus is able to expose greater than 1cm(2) of resist placed 17cm from the source. Many samples with good resolution have been obtained. An exposure can be made on PMMA with only 10 shots over a period of 2 seconds. It is expected that with a higher sensitivity resist, an exposure can be made with a single shot.
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收藏
页码:169 / 177
页数:9
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