The effect of isoelectronic substitution on the magneto-resistance of Sr2-xBaxFeMoO6

被引：23

作者：

Hemery, E. K. ^{[1
]}

Willlams, G. V. M.

Trodahl, H. J.

机构：

[1] Univ Victoria, MacDiarmand Inst Adv Mat & Nanotechnol, Wellington, New Zealand

[2] Ind Res Ltd, Lower Hutt, New Zealand

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 390卷 / 1-2期

关键词：

magneto-resistance; double perovskites; isoelectronic substitution;

D O I：

10.1016/j.physb.2006.08.010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report results from structural, transport and magnetic measurements on polycrystalline Sr(2-x)Ba(x)FeMoO(6) (x = 0, 1 and 2) half-metallic double perovskites. We find a large low field magneto-resistance MR) of similar to-25% at 0.8 T and 77 K for samples that have high resistivities. We show that the low field tunneling MR can be modeled by assuming that there is a disordered region near the insulating grain boundaries as proposed by Serrate et al. It is the magnetization from this region rather than the bulk magnetization that determines the MR in polycrystalline samples. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：175 / 178

页数：4

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