Broad-band semiconductor optical amplifiers

被引：1

作者：

Ding, Ying ^{[1
]}

Kan, Qiang

Wang, Jun-ling

Pan, Jiao-qing

Zhou, Fan

Chen, Wei-xi

Wang, Wei

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

[2] Beijing Jiaotong Univ, Inst Optoelect Technol, Beijing 100044, Peoples R China

[3] Peking Univ, Sch Phys, Beijing 100871, Peoples R China

来源：

JOURNAL OF LUMINESCENCE | 2007年 / 122卷

关键词：

semiconductor optical amplifiers (SOAs); bandwidth; saturation output power;

D O I：

10.1016/j.jlumin.2006.01.094

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Broad-band semiconductor optical amplifiers (SOAs) with different thicknesses and thin bulk tensile-strained active layers were fabricated and studied. Amplified spontaneous emission (ASE) spectra and gain spectra of SOAs were measured and analyzed at different CW biases. A maximal 3 dB ASE bandwidth of 136 nm ranging from 1480 to 1616 nm, and a 3 dB optical amplifier gain bandwidth of about 90 nm ranging from 1510 to 1600 nm, were obtained for the very thin bulk active SOA. Other SOAs characteristics such as saturation output power and polarization sensitivity were measured and compared. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：208 / 211

页数：4

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