A simulation study on thin SOI bipolar transistors with fully or partially depleted collector

被引：23

作者：

Ouyang, QQ ^{[1
]}

Cai, J ^{[1
]}

Ning, T ^{[1
]}

Oldiges, P ^{[1
]}

Johnson, JB ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, SRDC, Yorktown Hts, NY 10598 USA

来源：

PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2002年

关键词：

D O I：

10.1109/BIPOL.2002.1042880

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical npn BJTs on thin SOI with a partially or fully depleted collector are studied by 2-dimensional device simulations. It is found that compared to conventional bulk BJTs, the SOI BJTs have a reduced base-collector capacitance, a higher Early voltage and a higher breakdown voltage. A SOI BJT with a fully-depleted collector can achieve a higher f(max) with a comparable current gain and f(T).

引用

页码：28 / 31

页数：4

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