Interface and layer periodicity effects on the thermal conductivity of copper-based nanomultilayers with tungsten, tantalum, and tantalum nitride diffusion barriers

被引:21
作者
Cancellieri, Claudia [1 ]
Scott, Ethan A. [2 ]
Braun, Jeffrey [2 ]
King, Sean W. [3 ]
Oviedo, Ron [3 ]
Jezewski, Christopher [3 ]
Richards, John [3 ]
La Mattina, Fabio [1 ]
Jeurgens, Lars P. H. [1 ]
Hopkins, Patrick E. [2 ,4 ,5 ]
机构
[1] Empa, Swiss Fed Labs Mat Sci & Technol, Uberlandstr 129, CH-8600 Dubendorf, Switzerland
[2] Univ Virginia, Dept Mech & Aerosp Engn, Charlottesville, VA 22904 USA
[3] Intel Corp, Log Technol Dev, Hillsboro, OR 97124 USA
[4] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA
[5] Univ Virginia, Phys Dept, Charlottesville, VA 22904 USA
关键词
65;
D O I
10.1063/5.0019907
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nanomultilayers are complex architectures of materials stacked in sequence with layer thicknesses in the nanometer range. Their application in microelectronics is challenged by their thermal stability, conductivity, and interface reactivity, which can compromise their performance and usability. By using different materials as thermal barriers and by changing their thickness, it is possible to manipulate interfacial effects on thermal transport. In this work, we report on the thermal conductivity of Cu/W, Cu/Ta, and Cu/TaN sputter deposited nanomultilayers with different thicknesses. The resistive interfacial effects are rationalized and discussed also in relation to the structural transformation into a nano-composite upon high-temperature annealing.
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页数:9
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