Interface and layer periodicity effects on the thermal conductivity of copper-based nanomultilayers with tungsten, tantalum, and tantalum nitride diffusion barriers

被引:21
作者
Cancellieri, Claudia [1 ]
Scott, Ethan A. [2 ]
Braun, Jeffrey [2 ]
King, Sean W. [3 ]
Oviedo, Ron [3 ]
Jezewski, Christopher [3 ]
Richards, John [3 ]
La Mattina, Fabio [1 ]
Jeurgens, Lars P. H. [1 ]
Hopkins, Patrick E. [2 ,4 ,5 ]
机构
[1] Empa, Swiss Fed Labs Mat Sci & Technol, Uberlandstr 129, CH-8600 Dubendorf, Switzerland
[2] Univ Virginia, Dept Mech & Aerosp Engn, Charlottesville, VA 22904 USA
[3] Intel Corp, Log Technol Dev, Hillsboro, OR 97124 USA
[4] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA
[5] Univ Virginia, Phys Dept, Charlottesville, VA 22904 USA
关键词
65;
D O I
10.1063/5.0019907
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nanomultilayers are complex architectures of materials stacked in sequence with layer thicknesses in the nanometer range. Their application in microelectronics is challenged by their thermal stability, conductivity, and interface reactivity, which can compromise their performance and usability. By using different materials as thermal barriers and by changing their thickness, it is possible to manipulate interfacial effects on thermal transport. In this work, we report on the thermal conductivity of Cu/W, Cu/Ta, and Cu/TaN sputter deposited nanomultilayers with different thicknesses. The resistive interfacial effects are rationalized and discussed also in relation to the structural transformation into a nano-composite upon high-temperature annealing.
引用
收藏
页数:9
相关论文
共 65 条
  • [31] Heat-Transport Mechanisms in Superlattices
    Koh, Yee Kan
    Cao, Yu
    Cahill, David G.
    Jena, Debdeep
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (04) : 610 - 615
  • [32] Overview of dual damascene integration schemes in Cu BEOL integration
    Kriz, J.
    Angelkort, C.
    Czekalla, M.
    Huth, S.
    Meinhold, D.
    Pohl, A.
    Schulte, S.
    Thamm, A.
    Wallace, S.
    [J]. MICROELECTRONIC ENGINEERING, 2008, 85 (10) : 2128 - 2132
  • [33] Liner materials for direct electrodeposition of Cu
    Lane, MW
    Murray, CE
    McFeely, FR
    Vereecken, PM
    Rosenberg, R
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (12) : 2330 - 2332
  • [34] Structural and transport properties of Cu/Ta(N)/Cu interfaces in vertical interconnects
    Lanzillo, Nicholas A.
    Clevenger, Lawrence
    Robison, Robert R.
    Edelstein, Daniel C.
    [J]. JOURNAL OF APPLIED PHYSICS, 2020, 127 (12)
  • [35] Electron scattering at interfaces in nano-scale vertical interconnects: A combined experimental and ab initio study
    Lanzillo, Nicholas A.
    Restrepo, Oscar D.
    Bhosale, Prasad S.
    Cruz-Silva, Eduardo
    Yang, Chih-Chao
    Kim, Byoung Youp
    Spooner, Terry
    Standaert, Theodorus
    Child, Craig
    Bonilla, Griselda
    Murali, Kota V. R. M.
    [J]. APPLIED PHYSICS LETTERS, 2018, 112 (16)
  • [36] Ab Initio evaluation of electron transport properties of Pt, Rh, Ir, and Pd nanowires for advanced interconnect applications
    Lanzillo, Nicholas A.
    [J]. JOURNAL OF APPLIED PHYSICS, 2017, 121 (17)
  • [37] Thermal stability of a Cu/Ta multilayer: An intriguing interfacial reaction
    Lee, HJ
    Kwon, KW
    Ryu, C
    Sinclair, R
    [J]. ACTA MATERIALIA, 1999, 47 (15-16) : 3965 - 3975
  • [38] Effect of thin film confined between two dissimilar solids on interfacial thermal resistance
    Liang, Zhi
    Tsai, Hai-Lung
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 23 (49)
  • [39] Electron-phonon coupling and electron heat capacity of metals under conditions of strong electron-phonon nonequilibrium
    Lin, Zhibin
    Zhigilei, Leonid V.
    Celli, Vittorio
    [J]. PHYSICAL REVIEW B, 2008, 77 (07)
  • [40] THERMOPHYSICAL PROPERTIES OF LOW-RESIDUAL STRESS, SILICON-RICH, LPCVD SILICON-NITRIDE FILMS
    MASTRANGELO, CH
    TAI, YC
    MULLER, RS
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 1990, 23 (1-3) : 856 - 860