Temperature dependence of ferroelectricity and domain switching behavior in Pb(Zr0.3Ti0.7)O3 ferroelectric thin films

Owing to their high remanent polarization, fast switching behavior, and controllable preparation process, Pb(Zr0.3Ti0.7)O-3 (PZT) thin films are considered to be one of the most promising materials for non-volatile ferroelectric random access memory (FRAM). In this work, high-quality PZT thin films with a preferred (111) orientation and smooth surface are obtained by the sol-gel method. The temperature dependence of the ferroelectricity and domain switching behavior is thoroughly investigated by piezoresponse force microscopy (PFM). The domain structure undergoes distinct 180 degrees switching and reconstruction under an external DC voltage. Polarization hysteresis loop analysis of PZT reveals that the spontaneous polarization (P-s), remanent polarization (P-r), and coercive voltage (V-c) decrease as the temperature increases from 20 to 70 degrees C, in agreement with the Landau classical theory of phase transition. In addition, the PFM results show that the PZT films consistently exhibit good switching behavior as the temperature increases from 23.7 to 70 degrees C. An increase in the piezoelectric constant (D-max) with increasing temperature is ascribed to more rapid domain wall movement and easier domain reorientation, as predicted by thermodynamic theory. This investigation suggests that the temperature strongly affects the ferroelectricity and switching behavior of PZT thin films and offers guidance for the design of FRAM.