Crystal structure and electrical properties of epitaxial SrBi2Ta2O9 films

被引：40
作者：
Ishikawa, K
Funakubo, H
Saito, K
Suzuki, T
Nishi, Y
Fujimoto, M
机构：
[1] Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] Philips Analyt, Applicat Lab, Sagamihara, Kanagawa 2280803, Japan
[3] Taiyo Yuden R&D Ctr, Haruna, Gunma 3703347, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 11期
关键词：
D O I：
10.1063/1.373490
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The crystal structure and electrical properties were investigated for (001)- and (116)-oriented SrBi2Ta2O9 (SBT) thin films deposited on (100) SrTiO3 and (100)SrRuO(3)parallel to(100)SrTiO3 substrates, and (110) SrTiO3 and (110)SrRuO(3)parallel to(110)SrTiO3 substrates, respectively. Both oriented SBT films were epitaxially grown with high crystal perfection, and twinning existed in the (116)-oriented one. Both oriented SBT films were found to form c/6 lattice displacements to relax the stress. The interface of the (001)-oriented film did not include misfit dislocations, defects, and an interfacial layer, and that of the (116)-oriented film included the lattice strain contrast due to an irregular atomic arrangement. The electrical property of the SBT film shows anisotropy of the ferroelectricity along the c- and a-axis directions; the remanent polarizations of the (001)- and (116)-oriented SBT films were 0 and 10.5 mu C/cm(2), respectively. (C) 2000 American Institute of Physics. [S0021-8979(00)02111-3].
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页码：8018 / 8023
页数：6
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