Numerical calculation of electron density distribution in modulation-doped GaAs/AlGaAs heterostructures

被引：0
作者：
Szymanski, M [1 ]
Zbroszczyk, M [1 ]
机构：
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
来源：
OPTICA APPLICATA | 2002年 / 32卷 / 03期
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D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Electron density distribution in GaAs/AlGaAs heterostructure is calculated. In addition, the diagram of the conduction band edge is presented. The results were obtained through the self-consistent solution of one-dimensional Schrodinger-Poisson equations. For numerical calculations the finite-difference method with non-uniform mesh has been used.
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页码：529 / 534
页数：6
相关论文
共 6 条
[1]   Improvement of the electron density in the channel of an AlGaAs GaAs heterojunction by introducing Si δ doping in the quantum well [J].
Bouzaïene, L ;
Sfaxi, L ;
Sghaeïr, H ;
Maaref, H .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (12) :8223-8227
[2]   Investigation of two-dimensional electron gas concentration in selectively doped n-AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures [J].
Bouzaïene, L ;
Sfaxi, L ;
Maaref, H .
MICROELECTRONICS JOURNAL, 1999, 30 (07) :705-709
[3]  
CHUANG SL, 1995, PHYSICS OPTOELECTRON
[4]   Inverse C-V profiling technique for heterostructure semiconductor devices taking account of two-dimensional quantization effect [J].
Kikuchi, N ;
Ogawa, M ;
Miyoshi, T .
SOLID-STATE ELECTRONICS, 2000, 44 (09) :1663-1668
[5]  
Press W.H., 1992, NUMERICAL RECIPES FO
[6]   A SELF-CONSISTENT SOLUTION OF SCHRODINGER-POISSON EQUATIONS USING A NONUNIFORM MESH [J].
TAN, IH ;
SNIDER, GL ;
CHANG, LD ;
HU, EL .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) :4071-4076
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