Moisture sensitivity of p-ZnO/n-Si heterostructure

被引：26

作者：

Majumdar, Sayanee ^{[1
]}

Banerji, P. ^{[1
]}

机构：

[1] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2009年 / 140卷 / 01期

关键词：

ZnO; Semiconductor; Heterojunction; Moisture sensor; SENSOR; HUMIDITY; NANOWIRE;

D O I：

10.1016/j.snb.2009.03.053

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A p-ZnO/n-Si thin film heterojunction is fabricated on an n-type Si substrate by pulsed laser deposition (PLD). The crystallinity of the junction materials and surface morphology are examined by an X-ray diffractometer (XRD), scanning electron microscope (SEM) and cross-sectional transmission electron microscope (TEM). The current-voltage (I-V) characteristics of the p-n heterostructure show nonlinear diode like behavior. Zinc oxide doped with urea as nitrogen source shows p-type conductivity, which is further confirmed by its moisture sensing ability. The moisture sensitivity of the heterostructure shows the increase of resistance due to decrease of hole concentration and thus reveals the p-type conductivity of nitrogen doped ZnO film. Nitrogen doped p-ZnO/n-Si thin film heterojunction shows almost linear variation of resistance with relative humidity (RH) in the range 30-97% with a response and recovery time of 12 s and 36 s respectively at normal atmospheric temperature and pressure. (C) 2009 Published by Elsevier B.V.

引用

页码：134 / 138

页数：5

共 21 条

[1] Effect of doping level and spray time on zinc oxide thin films produced by spray pyrolysis for transparent electrodes applications [J].

Achour, Z. Ben ;

Ktari, T. ;

Ouertani, B. ;

Touayar, O. ;

Bessais, B. ;

Brahim, J. Ben .

SENSORS AND ACTUATORS A-PHYSICAL, 2007, 134 (02) :447-451

[2] Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy -: art. no. 241108 [J].

Alivov, YI ;

Özgür, Ü ;

Dogan, S ;

Johnstone, D ;

Avrutin, V ;

Onojima, N ;

Liu, C ;

Xie, J ;

Fan, Q ;

Morkoç, H .

APPLIED PHYSICS LETTERS, 2005, 86 (24) :1-3

[3] Effect of humidity on the gas sensing property of the tetrapod-shaped ZnO nanopowder sensor [J].

Bai, Zikui ;

Xie, Changsheng ;

Hu, Mulin ;

Zhang, Shunping ;

Zeng, Dawen .

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2008, 149 (01) :12-17

[4] Metrological characteristics of ZNO oxygen sensor at room temperature [J].

Chaabouni, F ;

Abaab, M ;

Rezig, B .

SENSORS AND ACTUATORS B-CHEMICAL, 2004, 100 (1-2) :200-204

[5] Single-nanowire electrically driven lasers [J].

Duan, XF ;

Huang, Y ;

Agarwal, R ;

Lieber, CM .

NATURE, 2003, 421 (6920) :241-245

[6] A novel gas sensor design based on CH4/H2/H2O plasma etched ZnO thin films [J].

Gruber, D ;

Kraus, F ;

Müller, J .

SENSORS AND ACTUATORS B-CHEMICAL, 2003, 92 (1-2) :81-89

[7]

Heiland G., Chemical Sensor Technology, V1, P15, DOI [DOI 10.1016/B978-0-444-98901-7.50007-5, 10.1016/B978-0-444-98901-7.50007-5]

[8] DEEP ENERGY-LEVELS OF DEFECTS IN THE WURTZITE SEMICONDUCTORS ALN, CDS, CDSE, ZNS, AND ZNO [J].

KOBAYASHI, A ;

SANKEY, OF ;

DOW, JD .

PHYSICAL REVIEW B, 1983, 28 (02) :946-956

[9] Control of conductivity type in undoped ZnO thin films grown by metalorganic vapor phase epitaxy [J].

Ma, Y ;

Du, GT ;

Yang, SR ;

Li, ZT ;

Zhao, BJ ;

Yang, XT ;

Yang, TP ;

Zhang, YT ;

Liu, DL .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) :6268-6272

[10] Properties of humidity sensing ZnO nanorods-base sensor fabricated by screen-printing [J].

Qi, Qi ;

Zhang, Tong ;

Yu, Qingjiang ;

Wang, Rui ;

Zeng, Yi ;

Liu, Li ;

Yang, Haibin .

SENSORS AND ACTUATORS B-CHEMICAL, 2008, 133 (02) :638-643

← 1 2 3 →