Light-induced creation and annihilation of two types of dangling bonds in a-Si:H:: their relative densities during illumination

被引：12

作者：

Morigaki, K ^{[1
]}

Hikita, H

机构：

[1] Hiroshima Inst Technol, Dept Elect Engn, Saeki Ku, Hiroshima 7315193, Japan

[2] Meikai Univ, Inst Phys, Urayasu 2798550, Japan

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 114卷 / 02期

关键词：

disordered systems; semiconductors; point defects; recombination and trapping;

D O I：

10.1016/S0038-1098(00)00009-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present a new model of light-induced creation of two types of dangling bonds, i.e. normal dangling bonds and hydrogen-related dangling bonds, in a-Si:H. We can account for the result that main dangling bonds are normal dangling bonds in high-quality samples, while both types of dangling bonds exist in low-quality samples containing a large amount of hydrogen. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：69 / 74

页数：6

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