The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications

被引：10

作者：

Lee, Joonmyoung ^{[1
]}

Choi, Hyejung ^{[1
]}

Seong, Dong-jun ^{[1
]}

Yoon, Jaesik ^{[1
]}

Park, Jubong ^{[1
]}

Jung, Seungjae ^{[1
]}

Lee, Wootae ^{[1
]}

Chang, Man ^{[1
]}

Cho, Chunhum ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 7-9期

关键词：

ReRAM; LCMO; Impedance spectroscopy;

D O I：

10.1016/j.mee.2009.03.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To acquire the reliable switching properties for ReRAM applications, we investigated the effect of Al interfacial layer on La0.7Sr0.3MnO3 resistive switching. Using impedance spectroscopy method, we verified that the switching was induced by the change of Mn-O bonding chains by modulating the oxygen vacancies at top oxygen deficient layer, not the AlOx formation. The device under nano-scale showed excellent retention properties at 125 degrees C and pulse switching endurance. Additionally, the good uniformity and yield properties under 4 in. wafer were confirmed for the mass production. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1933 / 1935

页数：3

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