Semi-Classical Ensemble Monte Carlo Simulator Using Innovative Quantum Corrections for Nano-Scale n-Channel FinFETs

被引:0
作者
Crum, Dax M. [1 ]
Valsaraj, Amithraj [1 ]
Register, Leonard F. [1 ]
Banerjee, Sanjay K. [1 ]
机构
[1] Univ Texas Austin, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA
来源
2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2014年
关键词
FinFET; Monte Carlo; quantum-confinement; surface roughness scattering; III-V; n-MOS; scaling; degenerate semiconductors; device modeling; TRANSPORT; SI; SEMICONDUCTORS; SCATTERING;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a three-dimensional semi-classical ensemble Monte Carlo device simulator with novel quantum corrections. The simulator includes a beyond-Fermi treatment of Pauli-Exclusion-blocked scattering, and a valley-dependent treatment of various quantum confinement effects. Quantum corrections to the potential are used not only to model redistribution of carriers in real space, but also to model altered energy valley offsets and associated redistribution of carriers in k-space, and quantum-confined scattering rates, including a new approach to model surface roughness scattering. We illustrate the capabilities of the simulator using different levels of modeling, with an emphasis on modeling nano-scale FinFETs with degenerate carrier populations, including III-V devices.
引用
收藏
页码:109 / 112
页数:4
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