High current induced failure of ACAs flip chip joint

被引:8
作者
Kwon, WS [1 ]
Paik, KW [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Yusong Gu, Taejon 305701, South Korea
来源
52ND ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, 2002 PROCEEDINGS | 2002年
关键词
D O I
10.1109/ECTC.2002.1008245
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper the maximum current carrying capability of ACAs flip chip joint is investigated based on two failure mechanisms: (1) degradation of the interface between gold stud bumps and aluminum pads; and (2) ACA swelling between chips and substrates under high current stress. For the determination of the maximum allowable current, bias stressing was applied to ACAs flip chip joint. The current level at which current carrying capability is saturated is defined as the maximum allowable current. The degradation mechanism under high current stress was studied by in-situ monitoring of gold stud bump-aluminum pad ACA contact resistance and also ACA junction temperature at various current level. The cumulative failure distributions were used to predict the lifetime of ACAs flip chip joint under high current stressing. These experimental results can be used to better understand and to improve the current carrying capability of ACA flip chip joint.
引用
收藏
页码:1130 / 1134
页数:3
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