High resolution structure imaging of octahedral void defects in as-grown Czochralski silicon

被引：30
|
作者：
Bender, H [1 ]
Vanhellemont, J [1 ]
Schmolke, R [1 ]
机构：
[1] WACKER SILTRON AG, D-84479 BURGHAUSEN, GERMANY
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 9AB期
关键词：
crystal originated particles; grown-in defects; octahedral void defects; Czochralski silicon; high resolution transmission electron microscopy; focused ion beam;
D O I：
10.1143/JJAP.36.L1217
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The crystal originated particles (COP's) as revealed by light scattering tools on Czochralski silicon a wafer surfaces are investigated by means of high resolution transmission electron microscopy (HREM) on specimens prepared by a focused ion beam tool, The structure imaging of buried defects gives direct evidence for the void nature of the defects leading to the formation of the COP's.
引用
收藏
页码：L1217 / L1220
页数：4
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