High resolution structure imaging of octahedral void defects in as-grown Czochralski silicon

被引：30
|
作者：
Bender, H [1 ]
Vanhellemont, J [1 ]
Schmolke, R [1 ]
机构：
[1] WACKER SILTRON AG, D-84479 BURGHAUSEN, GERMANY
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 9AB期
关键词：
crystal originated particles; grown-in defects; octahedral void defects; Czochralski silicon; high resolution transmission electron microscopy; focused ion beam;
D O I：
10.1143/JJAP.36.L1217
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The crystal originated particles (COP's) as revealed by light scattering tools on Czochralski silicon a wafer surfaces are investigated by means of high resolution transmission electron microscopy (HREM) on specimens prepared by a focused ion beam tool, The structure imaging of buried defects gives direct evidence for the void nature of the defects leading to the formation of the COP's.
引用
收藏
页码：L1217 / L1220
页数：4
相关论文
共 50 条
  • [31] DEFECTS IN SILICON-CRYSTALS AS-GROWN AND AFTER HIGH-TEMPERATURE ANNEALING
    SCHWUTTKE, GH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C385 - C385
  • [32] Defects in as-grown silicon and their evolution during heat treatments
    Vanhellemont, J
    Dornberger, E
    Esfandyari, J
    Kissinger, G
    Trauwaert, MA
    Bender, H
    Graf, D
    Lambert, U
    von Ammon, W
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 341 - 346
  • [33] Control of grown-in defects in Czochralski silicon crystals
    Hourai, M
    Kelly, GP
    Tanaka, T
    Umeno, S
    Ogushi, S
    PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON DEFECTS IN SILICON, 1999, 99 (01): : 372 - 385
  • [34] Application of copper-decoration method to characterize as-grown Czochralski-silicon
    Yamauchi, Tsuyoshi
    Tsumori, Yasuo
    Nakashizu, Tsuneo
    Esaka, Hisao
    Takao, Shigeyoshi
    Shinoyama, Seiji
    Japanese Journal of Applied Physics, Part 2: Letters, 1992, 31 (4 B):
  • [35] Formation process of grown-in defects in Czochralski grown silicon crystals
    Nakamura, K
    Saishoji, T
    Kubota, T
    Iida, T
    Shimanuki, Y
    Kotooka, T
    Tomioka, J
    JOURNAL OF CRYSTAL GROWTH, 1997, 180 (01) : 61 - 72
  • [36] Formation process of grown-in defects in Czochralski grown silicon crystals
    Komatsu Electronic Metals Co Ltd, Kanagawa, Japan
    J Cryst Growth, 1 (61-72):
  • [37] APPLICATION OF COPPER-DECORATION METHOD TO CHARACTERIZE AS-GROWN CZOCHRALSKI-SILICON
    YAMAUCHI, T
    TSUMORI, Y
    NAKASHIZU, T
    ESAKA, H
    TAKAO, S
    SHINOYAMA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (4B): : L439 - L442
  • [38] OXYGEN-INDUCED RECOMBINATION CENTERS IN AS-GROWN CZOCHRALSKI SILICON-CRYSTALS
    NAUKA, K
    GATOS, HC
    LAGOWSKI, J
    APPLIED PHYSICS LETTERS, 1983, 43 (03) : 241 - 243
  • [39] MORPHOLOGY AND SIZE DISTRIBUTION OF OXIDE PRECIPITATES IN AS-GROWN CZOCHRALSKI SILICON-CRYSTALS
    SUEOKA, K
    IKEDA, N
    YAMAMOTO, T
    APPLIED PHYSICS LETTERS, 1994, 65 (13) : 1686 - 1688
  • [40] Transmission electron microscope observation of 'IR scattering defects' in As-grown Czochralski Si crystals
    Shin-Etsu Handotai Co, Ltd, Gunma, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 11 (5597-5601):
12345