High resolution structure imaging of octahedral void defects in as-grown Czochralski silicon

被引：30

作者：

Bender, H ^{[1
]}

Vanhellemont, J ^{[1
]}

Schmolke, R ^{[1
]}

机构：

[1] WACKER SILTRON AG, D-84479 BURGHAUSEN, GERMANY

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 9AB期

关键词：

crystal originated particles; grown-in defects; octahedral void defects; Czochralski silicon; high resolution transmission electron microscopy; focused ion beam;

D O I：

10.1143/JJAP.36.L1217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The crystal originated particles (COP's) as revealed by light scattering tools on Czochralski silicon a wafer surfaces are investigated by means of high resolution transmission electron microscopy (HREM) on specimens prepared by a focused ion beam tool, The structure imaging of buried defects gives direct evidence for the void nature of the defects leading to the formation of the COP's.

引用

页码：L1217 / L1220

页数：4

共 14 条

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Itsumi, M
Takeda, T
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[12] VANHELLEMONT J, 1997, I PHYS C SER
[13] RECOGNITION OF D-DEFECTS IN SILICON SINGLE-CRYSTALS BY PREFERENTIAL ETCHING AND EFFECT ON GATE OXIDE INTEGRITY
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FUSEGAWA, I
FUJIMAKI, N
KATAYAMA, M
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (1A) : A135 - A140
[14] YOUNG RJ, 1990, MATER RES SOC SYMP P, V199, P205, DOI 10.1557/PROC-199-205

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