Effect of Sputtering Temperature on Structure and Optical Properties of NiO Films Fabricated by Magnetron Sputtering

被引：8

作者：

Wang, Hui ^{[1
]}

Zhao, Yang ^{[1
]}

Li, Xinzhong ^{[1
]}

Zhen, Zhiqiang ^{[1
]}

Li, Hehe ^{[1
]}

Wang, Jingge ^{[1
]}

Tang, Miaomiao ^{[1
]}

机构：

[1] Henan Univ Sci & Technol, Sch Phys & Engn, 263 Kaiyuan Ave, Luoyang 471003, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2017年 / 46卷 / 07期

基金：

中国国家自然科学基金;

关键词：

NiO; magnetron sputtering; sputtering temperature; structure properties; LIGHT-EMITTING DIODE; THIN-FILMS; ULTRAVIOLET ELECTROLUMINESCENCE; DEPOSITION; GROWTH; MOCVD;

D O I：

10.1007/s11664-017-5453-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

NiO thin films were deposited on sapphire and Corning 1737 glass substrates using the radio frequency magnetron sputtering system. The structures, optical and electrical properties of NiO films grown under different sputtering temperatures were thoroughly studied. The NiO films were composed of different-size NiO nano-grains with a strong (111) preferred orientation. The NiO grain size increased with the sputtering temperature increase. The band gap values decreased from 3.69 eV to 3.38 eV on the sputtering temperature increase from 30A degrees C to 450A degrees C. Moreover, the electrical property variations of the NiO samples were studied by the Hall effect in detail.

引用

页码：4052 / 4056

页数：5

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