Properties of μm-thick CdSe prepared by vacuum deposition

被引：5

作者：

Kurokawa, A ^{[1
]}

Muto, J ^{[1
]}

机构：

[1] Keio Univ, Fac Sci & Technol, Dept Appl Phys & Physicoinformat, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2003年 / 14卷 / 01期

关键词：

D O I：

10.1023/A:1021575531591

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated vacuum-evaporated CdSe films with thickness, of the order of micrometers. The films show hexagonal structure with c-axes perpendicular to the glass substrates. At higher temperatures, the sample exhibits grain-boundard scattering and Se the vacancy acts as a donor impurity; while at lower temperatures, shallow donor levels overlap into the conduction band and thus metallic impurity conduction occurs. (C) 2003 Kluwer Academic Publishers.

引用

页码：33 / 35

页数：3

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